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MFG:Toshiba  Category:Discrete Semiconductor Products  

2SC2235-O(TE6,F,M)

2SC Series Datasheet download

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Part Number: 2SC2235-O(TE6,F,M)

Category: Discrete Semiconductor Products

MFG: Toshiba

 

 

Descriptions: TRANSISTOR NPN 120V 0.8A TO-92

Price Break

3000

Unit Price

.14985

Extended Price

449.55

(All prices are in USD) Prices for reference only
Urgent Purchase

2SC2235-O(TE6,F,M) General Description

TRANSISTOR NPN 120V 0.8A TO-92

2SC2235-O(TE6,F,M) Parameters

Technical/Catalog Information2SC2235-O(TE6,F,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)800mA
Power - Max900mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Frequency - Transition120MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3 Modified (Straight Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SC2235 O TE6,F,M
2SC2235OTE6,F,M

2SC2235-O(TE6,F,M) datasheet

2SC0829
PDF/DataSheet Download

  • Datasheet: 2SC0829
  • File Size: 114565 KB
  • Manufacturer: PANASONIC [Panasonic Semiconductor]
  • Click here to Download

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Related Part Number

2SC2235-O(TE6,F,M) Relative Products

  • 2SC2235

    2SC2235

  • 2SC2233

    2SC2233

    The 2SC2233 features: ·Collector-Emitter Breakdown Voltage-:VCEO= 60V(Min)·DC Current Gain-: hFE= 30(Min)@ (VCE= 5V, IC= 1A)·High Collector Current·High Collector Power Dissipation

  • 2SC2230

    2SC2230

    Features of the 2SC2230 are:(1)hig voltage:VCEO=180V;(2)high DC current gain. The absolute maximum ratings of the 2SC2230 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 200,the unit is V;(2):the charac...

  • 2SC223

    2SC223

    The 2SC223 features: ·With TO-220 package·Complement to type 2SA968·High breakdown votage

  • 2SC2229

    2SC2229

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