MFG:Toshiba Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Toshiba
Descriptions: TRANSISTOR NPN 60V 3A PW MOLD
400
.41550
166.20
| Technical/Catalog Information | 2SD1221-Y(Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 500mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Frequency - Transition | 3MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | PW-Mold |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SD1221 Y Q 2SD1221YQ |
2SD0592
PDF/DataSheet Download
The 2SD1221 is a transistor,silicon npn triple diffused type(pct process). Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:pc=20W; (3)complementary to 2SB906. The absolute maximum ratings of th...
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