MFG:Toshiba Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Toshiba
Descriptions: TRANSISTOR NPN 80V 4A PW MOLD
2000
.36309
726.18
| Technical/Catalog Information | 2SD1223(TE16L1,NQ) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 4A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | PW-Mold |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SD1223 TE16L1,NQ 2SD1223TE16L1,NQ |
2SD0592
PDF/DataSheet Download
The 2SD1223 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1223 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB908. The absolute maximum ratings o...
The 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB907. The absolute maximum ratings o...
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