MFG:Toshiba Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Toshiba
Descriptions: TRANS NPN 100V 5A 2-10R1A
200
1.16200
232.40
| Technical/Catalog Information | 2SD1407A-Y(F) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 30W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 400mA, 4A |
| Frequency - Transition | 12MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | 2-10R1A (TO-220 NIS) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SD1407A Y F 2SD1407AYF |
2SD0592
PDF/DataSheet Download
TRANS NPN 100V 5A 2-10R1A
The 2SD1407A is designed as toshiba transistor silicon triple diffused type for power amplifier applications.2SD1407Ahas three features. (1)High breakdown voltage which would be 100V. (2)Low collector saturation voltage which would be 2.0V max. (3)Complement...
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The 2SD1404 features: ·High Collector Current Capability·High Collector Power Dissipation Capability·Built-in Damper Diode
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