MFG:Toshiba Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Toshiba
Descriptions: MOSFET P-CH 60V 1A SC-62
400
.39750
159.00
| Technical/Catalog Information | 2SJ360(F) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 155pF @ 10V |
| Power - Max | 500mW |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 6.5nC @ 10V |
| Package / Case | * |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SJ360 F 2SJ360F |
2SJ0163
PDF/DataSheet Download
The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be directly driven by an IC operating at 5 V.The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for applications ...
The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications ...
The 2SJ356 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.2SJ356 has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and...
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The 2SJ353 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.2SJ353 has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and...
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