MFG:Toshiba Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Toshiba
Descriptions: MOSFET N-CH 1000V 4A TO-220AB
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2.21340
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| Technical/Catalog Information | 2SK1119(F) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SK1119 F 2SK1119F |
2SK0065
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