DS1245Y-70IND+

The DS1245Y-70IND+ 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard.  DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

The feature of the DS1245Y-70IND+ are:(1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 128k x 8 volatile static RAM,EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range (DS1245Y); (9)Optional ±5% VCC operating range (DS1245AB); (10)Optional industrial temperature range of -40°C to +85°C, designated IND; (11)JEDEC standard 32-pin DIP package.

The absolute maximum ratings of the DS1245Y-70IND+ can be summarized as:(1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature:0°C to 70°C, -40°C to +85°C for Ind parts ; (3)Storage Temperature: -40°C to +70°C, -40°C to +85°C for Ind parts; (4)Soldering Temperature: 260°C for 10 seconds.

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