Package Cooled:7850 D/C:FAIRCHILD
Package Cooled: 7850
D/C: FAIRCHILD
Description: These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's...
These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.
| Symbol | Parameter | FDA59N25 | Unit |
| VDSS | Drain-Source Voltage | 250 | V |
| VDS(Avalanche) | Repetitive Avalanche Voltage (Note 1, 2) |
300 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
59 35 |
A A |
| IDM | Drain Current - Pulsed (Note 1) |
236 | A |
| VGSS | Gate-Source voltage | ±30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1458 | mJ |
| IAR | Avalanche Current (Note 1) | 59 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 39.2 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
392 3.2 |
W W/ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 |
FDA59N25
PDF/DataSheet Download
These FDA50N50 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior swi...
MOSFET N-CH 250V 33A TO-3PN
These FDA28N50F N-Channel enhancement mode power field effecttransistors are produced using Failchild?s proprietary, planarstripe, DMOS technology. This advance technology has been especially tailored tominimize on-state resistance, provide superior switchi...
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