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MFG:TO-247/TO-3P/TO-3PF  Package Cooled:7850  D/C:FAIRCHILD  

FDAF69N25 Product Image

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Part Number: FDAF69N25

 

MFG: TO-247/TO-3P/TO-3PF

Package Cooled: 7850

D/C: FAIRCHILD

Description: These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's...


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FDAF69N25 General Description


  These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

  This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switching DC/DC converters and switched mode power supplies.

FDAF69N25 Maximum Ratings

Symbol Parameter FDA59N25 Unit
VDSS Drain-Source Voltage 250 V
VDS(Avalanche)
Repetitive Avalanche Voltage (Note 1, 2)		 300 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)		 34
21.5		 A
A
IDM
Drain Current - Pulsed (Note 1)		 136 A
VGSS Gate-Source voltage 30
±		 V
EAS
Single Pulsed Avalanche Energy (Note 2)		 1894 mJ
IAR Avalanche Current (Note 1) 34 A
EAR Repetitive Avalanche Energy (Note 1) 11.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
                              - Derate above 25		 115
0.93		 W
W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL
 Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds		 300

FDAF69N25 Features

* 34A, 250V, RDS(on) = 0.041 @VGS = 10 V
* Low gate charge ( typical 77 nC)
* Low Crss ( typical  84 pF)
* Fast switching
* Improved dv/dt capability

FDAF69N25 datasheet

FDAF69N25
PDF/DataSheet Download

  • Datasheet: FDAF69N25
  • File Size: 650860 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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Related Part Number

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