MFG:FAIRCHILD Package Cooled:SOT23-6
MFG: FAIRCHILD
Package Cooled: SOT23-6
Description: These P-Channel 2.5V specified MOSFETs areproduced using Fairchild Semiconductor's advance...
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
-20 |
V |
|
VGSS |
Gate-Source Voltage |
±12 |
V |
|
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
2.2 |
A |
|
6 | |||
|
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c) |
0.96 |
W |
|
0.9 | |||
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
FDC6310P
PDF/DataSheet Download
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