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MFG:FAIRCHILD  Package Cooled:SOT23-6  

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Part Number: FDC6318P

 

MFG: FAIRCHILD

Package Cooled: SOT23-6

 

Description: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTren...


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FDC6318P General Description


These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

FDC6318P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
2.5
A
7
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C

FDC6318P Features

•  2.5 A, 12 V. R DS(ON)=  90 mΩ @ VGS = 4.5 V 
                            R DS(ON)= 125 mΩ @ VGS = 2.5 V 
                            R DS(ON)= 200 mΩ @ VGS = 1.8 V
•  High performance trench technology for extremely low   R DS(ON)
•  SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

FDC6318P Typical Application

•  Power management
•  Load switch

FDC6318P datasheet

FDC6318P
PDF/DataSheet Download

  • Datasheet: FDC6318P
  • File Size: 169188 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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