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Part Number: FDC6561AN

 

MFG: FAIRCHILD

 

D/C: 06+

Description: These N-ChannelLogicLevel MOSFETs are produced using Fairchild Semicondu...


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FDC6561AN General Description


These N-Channel  Logic  Level  MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

FDC6561AN Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
2.5
A
10
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C

FDC6561AN Features

2.5 A, 30 V.  R DS(ON)= 0.095 W  @ VGS = 10 V                     
                    R DS(ON)= 0.145 W  @ VGS = 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC6561AN datasheet

FDC6561AN
PDF/DataSheet Download

  • Datasheet: FDC6561AN
  • File Size: 262911 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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