MFG:FAIRCHILD Package Cooled:SSOT-6FLM D/C:2005
MFG: FAIRCHILD
Package Cooled: SSOT-6FLM
D/C: 2005
Description: This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process....
This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage Power Trench process. It has been optimized for battery power management applications.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
20 |
V |
|
VGSS |
Gate-Source Voltage |
±8 |
V |
|
ID |
Drain Current Continuous (Note 1a)
Pulsed |
-8 |
A |
|
-40 | |||
|
PD |
Maximum Power Dissipation (Note 1a)
(Note 1b) |
2 |
W |
|
1.5 | |||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V
RDS(ON) = 25 m @ VGS = 2.5 V
RDS(ON) = 35 m @ VGS = 1.8 V
High performance trench technology for extremely low RDS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC697P
PDF/DataSheet Download
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