MFG:FAIRCHILD Package Cooled:06+ D/C:SOT-163
MFG: FAIRCHILD
Package Cooled: 06+
D/C: SOT-163
Description: This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Po...
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
12 |
V |
|
VGSS |
Gate-Source Voltage |
±12 |
V |
|
ID |
Drain Current Continuous (Note 1a)
Pulsed |
-7 |
A |
|
-40 | |||
|
PD |
Maximum Power Dissipation (Note 1a)
(Note 1b) |
2 |
W |
|
1.5 | |||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |
7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V
RDS(ON) = 30 m@ VGS = 2.5 V
High performance trench technology for extremely low RDS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC699P
PDF/DataSheet Download
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