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MFG:Toshiba  Category:Discrete Semiconductor Products  

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Part Number: GT60M303(Q)

Category: Discrete Semiconductor Products

MFG: Toshiba

 

 

Descriptions: IGBT 900V DUAL 60A TO-3P LH

Price Break

100

Unit Price

4.06760

Extended Price

406.76

(All prices are in USD) Prices for reference only
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GT60M303(Q) General Description

IGBT 900V DUAL 60A TO-3P LH

GT60M303(Q) Parameters

Technical/Catalog InformationGT60M303(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 60A
Power - Max170W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT60M303 Q
GT60M303Q

GT60M303(Q) datasheet

GT605
PDF/DataSheet Download

  • Datasheet: GT605
  • File Size: 73488 KB
  • Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
  • Click here to Download

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