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Part Number: GT60N322(Q)

Category: Discrete Semiconductor Products

MFG: Toshiba

 

 

Descriptions: IGBT 1000V 57A TO-3P LH

Price Break

100

Unit Price

4.89110

Extended Price

489.11

(All prices are in USD) Prices for reference only
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GT60N322(Q) General Description

IGBT 1000V 57A TO-3P LH

GT60N322(Q) Parameters

Technical/Catalog InformationGT60N322(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)57A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max200W
Mounting TypeThrough Hole
Package / Case*
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GT60N322 Q
GT60N322Q

GT60N322(Q) datasheet

GT605
PDF/DataSheet Download

  • Datasheet: GT605
  • File Size: 73488 KB
  • Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
  • Click here to Download

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