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IRFS4510PBF

MOSFET N CH 100V D2PAK

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SeekIC No. : 003433546 Detail

IRFS4510PBF: MOSFET N CH 100V D2PAK

IRFS4510PBF Data Sheet

floor Price/Ceiling Price

US $ .43~1.06 / Piece | Get Latest Price
Part Number:
IRFS4510PBF
Mfg:
Supply Ability:
5000

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  • 25~50
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  • Unit Price
  • $1.06
  • $.69
  • $.63
  • $.57
  • $.53
  • $.5
  • $.47
  • $.45
  • $.43
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: -
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 37A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) @ Vgs: 87nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3180pF @ 50V
Power - Max: 140W Mounting Type: *
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: -
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 87nC @ 10V
Packaging: TubeAlternate Packaging
Mounting Type: *
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 100µA
Power - Max: 140W
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds: 3180pF @ 50V
Supplier Device Package: D²PAK


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