MOSFET 12V 11.8/8.9A 1.4W
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DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 11.8 A, 8.9 A | ||
| Resistance Drain-Source RDS (on) : | 17 mOhms, 32 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK SO-8 | Packaging : | Reel |