IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
STGP35N35LZ: IGBT Transistors EAS 450mJ 345V PowerMESH IGBT
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
| Collector-Emitter Saturation Voltage : | 1.7 V | Continuous Collector Current at 25 C : | 40 A |
| Gate-Emitter Leakage Current : | 830 uA | Power Dissipation : | 176 W |
| Maximum Operating Temperature : | + 175 C | Package / Case : | TO-220 |
| Packaging : | Tube |