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Part Number: STP9NM60N

 

 

 

 

Description: The STP9NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET a...


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STP9NM60N General Description


The STP9NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STP9NM60N Maximum Ratings

Symbol Parameter Value   Unit
    TO-220/DPAK/IPAK TO-220FP  
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 600 V
VGE Gate-Emitter Voltage ±25 V
IC Collector Current (continuous) at TC = 25°C (#) 20 9 A
IC Collector Current (continuous) at TC = 100°C (#) 10 6 A
ICM (`) Collector Current (pulsed) 40 A
IF Diode RMS Forward Current at TC = 25°C 10 A
PTOT Total Dissipation at TC = 25°C 60 25 W
  Derating Factor 0.48 0.20 W/°C
VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) - 2500 V
Tstg Storage Temperature 55 to 150 °C
Tj Operating Junction Temperature

STP9NM60N Features

·100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
·LOW GATE INPUT RESISTANCE

STP9NM60N Typical Application

·HIGHER EFFICIENCIES

STP9NM60N datasheet

STP9NM60N
PDF/DataSheet Download

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Related Part Number

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