13003CJ, 13003D, 13003DL Selling Leads, Datasheet
MFG:CJ Package Cooled:TO-126 D/C:05+
13003CJ, 13003D, 13003DL Datasheet download
Part Number: 13003CJ
MFG: CJ
Package Cooled: TO-126
D/C: 05+
13003CJ, 13003D, 13003DL
- Table of contents:
Info of 13003CJ
Info of 13003D
Info of 13003DL
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About 13001
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Datasheet: 13001
File Size: 159240 KB
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About 13001
PDF/DataSheet Download
Datasheet: 13001
File Size: 159240 KB
Manufacturer:
Download : Click here to Download
About 13001
PDF/DataSheet Download
Datasheet: 13001
File Size: 159240 KB
Manufacturer:
Download : Click here to Download
13003D General Description
The 13003D is one member of the ST13003D-K family which is designed as the high voltage fast-switching NPN power transistor. This device can be used in electronic ballast for fluorescent lighting. Also it is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. Features of the ST13003D-K are:(1)integrated antiparallel collector-emitter diode;(2)minimum lot-to-lot spread for reliable operation;(3)very high switching speed;(4)low spread of dynamic parameters;(5)high voltage capability.
The absolute maximum ratings of the ST13003D-K can be summarized as:(1)collector-emitter voltage (VBE=0):700 V;(2)collector-emitter voltage (IB=0):400 V;(3)emitter-base voltage (Ic=0, IB=0.75A, tp<10s):V(BR)EBO V;(4)collector current:1.5 A;(5)collector peak current (tP < 5ms):3 A;(6)base current:0.75 A;(7)base peak current (tP < 5ms):1.5 A;(8)total dissipation at Tc=25°C:40 W;(9)storage temperature:-55 to 150 °C;(10)max. operating junction temperature: 150 °C.
The electrical characteristics of the ST13003D-K can be summarized as:(1)collector cut-off current (VBE=-1.5V, VCE=700V):1 mA;(2)collector cut-off current (VBE=-1.5V, VCE=700V, Tc=125°C):5 mA;(3)emitter-base breakdown voltage (Ic=0):9 to 18 V;(4)collector-emitter sustaining voltage:400 V;(5)diode forward voltage:1.5 V;(6)DC current gain (Ic=0.5A VCE=2V):8 to 20. If you want to know more information such as the electrical characteristics about the ST13003D-K, please download the datasheet in www.seekic.com or www.chinaicmart.com.
13003DL General Description
The 13003DL is one member of the ST13003D-K family which is designed as the high voltage fast-switching NPN power transistor. This device can be used in electronic ballast for fluorescent lighting. Also it is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. Features of the ST13003D-K are:(1)integrated antiparallel collector-emitter diode;(2)minimum lot-to-lot spread for reliable operation;(3)very high switching speed;(4)low spread of dynamic parameters;(5)high voltage capability.
The absolute maximum ratings of the ST13003D-K can be summarized as:(1)collector-emitter voltage (VBE=0):700 V;(2)collector-emitter voltage (IB=0):400 V;(3)emitter-base voltage (Ic=0, IB=0.75A, tp<10s):V(BR)EBO V;(4)collector current:1.5 A;(5)collector peak current (tP < 5ms):3 A;(6)base current:0.75 A;(7)base peak current (tP < 5ms):1.5 A;(8)total dissipation at Tc=25°C:40 W;(9)storage temperature:-55 to 150 °C;(10)max. operating junction temperature: 150 °C.
The electrical characteristics of the ST13003D-K can be summarized as:(1)collector cut-off current (VBE=-1.5V, VCE=700V):1 mA;(2)collector cut-off current (VBE=-1.5V, VCE=700V, Tc=125°C):5 mA;(3)emitter-base breakdown voltage (Ic=0):9 to 18 V;(4)collector-emitter sustaining voltage:400 V;(5)diode forward voltage:1.5 V;(6)DC current gain (Ic=0.5A VCE=2V):8 to 20. If you want to know more information such as the electrical characteristics about the ST13003D-K, please download the datasheet in www.seekic.com or www.chinaicmart.com.
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