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1SS401, 1SS402, 1SS403

1SS401, 1SS402, 1SS403 Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:SOT-323  D/C:04+

1SS401, 1SS402, 1SS403 Picture

1SS401, 1SS402, 1SS403 Datasheet download

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Part Number: 1SS401

 

MFG: TOSHIBA

Package Cooled: SOT-323

D/C: 04+

 

 

 
 
 
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About 1SS401

PDF/DataSheet Download

Datasheet: 1SS401

File Size: 110391 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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  • 1SS402

  • Vendor: Toshiba Qty: 9000 Note: A7  Adddate: 2026-06-30
  • Inquire Now
  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)

About 1SS402

PDF/DataSheet Download

Datasheet: 1SS402

File Size: 115411 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About 1SS403

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Datasheet: 1SS403

File Size: 128207 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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1SS401 Maximum Ratings

Parameter
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
P
Tj
Tstg
25
20
700
300
100
125
-55 to +125
V
V
mA
mA
W

1SS401 Features

Low forward voltage:VF(3) = 0.38 V(Typ)
Low reverse current:IR = 50 A
Small total capacitance:CT = 46 pF(Typ)

1SS402 Maximum Ratings

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 25 V
Reverse voltage VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current IO 50 mA
Average forward current IFSM 1 A
Power dissipation p 100 mW
Junction temperature Tj 125
Storage temperature Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating * 1.5

1SS402 Features

`Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.
`Low forward voltage : VF (3) = 0.50V (typ.)
`Low reverse current : IR= 0.5A (max)
`Small total capacitance : CT = 3.9pF (typ.)

1SS402 Connection Diagram

1SS403 Maximum Ratings

Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 250 V
Reverse voltage VR 200 V
Maximum (peak) forward current IFM 300 mA
Average forward current IO 100 mA
Surge current (10ms) IFSM 2 A
Power dissipation P 200* mW
Junction temperature Tj 125
Storage temperature Tstg −55∼125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

1SS403 Features

·Two-pin small packages are suitable for higher mounting densities.
·Excellent in forward current and forward voltage characteristics : VF (2) = 0.90V (typ.)
·Fast reverse recovery time : trr = 60ns (typ.)
·Small total capacitance : CT = 1.5pF (typ.)

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