1SS423, 1SS424, 1SS425 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:822 D/C:SOT523
1SS423, 1SS424, 1SS425 Datasheet download
Part Number: 1SS423
MFG: TOSHIBA
Package Cooled: 822
D/C: SOT523
1SS423, 1SS424, 1SS425
- Table of contents:
Info of 1SS423
Info of 1SS424
Info of 1SS425
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About 1SS104
PDF/DataSheet Download
Datasheet: 1SS104
File Size: 69893 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About 1SS104
PDF/DataSheet Download
Datasheet: 1SS104
File Size: 69893 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About 1SS104
PDF/DataSheet Download
Datasheet: 1SS104
File Size: 69893 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
1SS423 Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Maximum (peak) reverse voltage | VRM | 45 | V |
| Reverse voltage | VR | 40 | V |
| Maximum (peak) forward current | IFM | 200* | mA |
| Average forward current | IO | 100* | mA |
| Power dissipation | IFSM | 1* | A |
| Power dissipation | P | 100* | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature range | Tstg | −55~125 | |
| Operating temperature range | Topr | −40~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1SS423 Typical Application
• Small package
• Low forward voltage: VF (3) = 0.56 V (typ.)
• Low reverse current: IR = 5 A (max)
• Low forward voltage: VF (3) = 0.56 V (typ.)
• Low reverse current: IR = 5 A (max)
1SS424 Maximum Ratings
|
Characteristic |
Symbol |
Rating |
Unit |
| Maximum (peak) reverse voltage |
VRM |
30 |
V |
| Reverse voltage |
VR |
20 |
V |
| Maximum (peak) forward current |
IFM |
300 |
mA |
| Average forward current |
IO |
200 |
mA |
| Surge current (10 ms) |
IFSM |
1 |
A |
| Power dissipation |
P * |
150 |
mW |
| Junction temperature |
Tj |
125 |
|
| Storage temperature range |
Tstg |
-55~125 |
|
| Operating temperature range |
Topr |
-40~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a glass-epoxy circuit board of 20*20 mm,pad dimensions of 4*4 mm.
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