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The Microchip Technology Inc. 24AA65 is a "smart" 8K x 8 Serial Electrically Erasable PROM. This device has been developed for advanced, low power applications such as personal communications, and provides the systems designer with flexibility through the use of many new user-programmable features. It is capable of opera-tion down to 1.8V, the end-of-life voltage for 2 "AA" bat-tery cells for most popular battery technologies.The 24AA65 offers a relocatable 4K bit block of ultra-high-endurance memory for data that changes frequently. The remainder of the array, or 60K bits, is rated at 1,000,000
ERASE/WRITE (E/W) cycles guaranteed. The 24AA65 features an input cache for fast write loads with a capac-ity of eight pages, or 64 bytes. This device also features programmable security options for E/W protection of crit-ical data and/or code of up to fifteen 4K blocks. Func-tional address lines allow the connection of up to eight 24LC65's on the same bus for up to 512K bits contigu-ous EEPROM memory.Advanced CMOS technology makes this device ideal for low-power non-volatile code and data applications. The 24AA65 is available in the standard 8-pin plastic DIP and 8-pin surface mount SOIC package.
24AA65 Maximum Ratings
VCC..................................................................................7.0V All inputs and outputs w.r.t. VSS...............-0.6V to VCC +1.0V Storage temperature......................................-65 to+150 Ambient temp. with power applied................-65 to +125 Soldering temperature of leads (10 seconds).............+300 ESD protection on all pins..................................................+ 4 kV *Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rat-ing only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
24AA65 Features
* Voltage operating range: 1.8V to 6.0V - Peak write current 3 mA at 6.0V - Maximum read current 150 m A at 6.0V - Standby current 1 m A typical * Industry standard two wire bus protocol I2 C compatible * 8 byte page, or byte modes available * 2 ms typical write cycle time, byte or page * 64-byte line input cache for fast write loads * Up to 8 devices may be connected to the same bus for up to 512K bits total memory * 100 kHz (1.8V) and 400 kHz (5.0V) compatibility * Programmable block security options * Programmable endurance options * Schmitt trigger, filtered inputs for noise suppres-sion * Output slope control to eliminate ground bounce * Self-timed ERASE and WRITE cycles * Power on/off data protection circuitry * Endurance: - 10,000,000 E/W cycles guaranteed for a High Endurance Block - 1,000,000 E/W cycles guaranteed for a Stan-dard Endurance Block * Electrostatic discharge protection > 4000V * Data retention > 200 years * 8-pin PDIP/SOIC packages * Temperature ranges - Commercial (C): 0 C to +70 C