28F016S3, 28F020, 28F032SA-70 Selling Leads, Datasheet
MFG:INTEL MITEL Package Cooled:TSOP40 D/C:09+
28F016S3, 28F020, 28F032SA-70 Datasheet download
Part Number: 28F016S3
MFG: INTEL MITEL
Package Cooled: TSOP40
D/C: 09+
28F016S3, 28F020, 28F032SA-70
- Table of contents:
Info of 28F016S3
Info of 28F020
Info of 28F032SA-70
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About 28F016S3
PDF/DataSheet Download
Datasheet: 28F016S3
File Size: 482313 KB
Manufacturer: Intel
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About 28F020
PDF/DataSheet Download
Datasheet: 28F020
File Size: 899897 KB
Manufacturer: INTEL [Intel Corporation]
Download : Click here to Download
About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
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28F016S3 Maximum Ratings
Temperature under Bias...............10 °C to +80 °C
Storage Temperature ............... 65 °C to +125 °C
Voltage On Any Pin
(except VPP, and RP#)..................2.0 V to +7.0 V(2)
VPP Voltage .............................2.0 V to +14.0 V(1,2)
RP# Voltage.......................... 2.0 V to +14.0 V(1,2,4)
Output Short Circuit Current ...................... 100 mA(3)
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is 0.5 V on input/output pins and 0.2 V on VCC, RP#, and VPP pins. During transitions, this level may undershoot to 2.0 V for periods <20 ns. Maximum DC voltage on input/output pins and VCC is VCC +0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns.
2. Maximum DC voltage on VPP and RP# may overshoot to +14.0 V for periods <20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
4. RP# voltage is normally at VIL or VIH. Connection to supply of VHH is allowed for a maximum cumulative period of 80 hours.
28F016S3 Features
` SmartVoltage Technology
- 2.7 V (Read-Only) or 3.3 V VCC and 3.3 V or 12 V VPP
` High-Performance
- 120 ns Read Access Time
` Enhanced Data Protection Features
- Absolute Protection with VPP = GND
- Flexible Block Locking
- Block Write Lockout during Power Transitions
` Enhanced Automated Suspend Options
- Program Suspend to Read
- Block Erase Suspend to Program
- Block Erase Suspend to Read
` Industry-Standard Packaging
- 40-Lead TSOP, 44-Lead PSOP
` High-Density 64-Kbyte Symmetrical Erase Block Architecture
- 4 Mbit: Eight Blocks
- 8 Mbit: Sixteen Blocks
- 16 Mbit: Thirty-Two Blocks
`Extended Cycling Capability
- 100,000 Block Erase Cycles
` Low Power Management
- Deep Power-Down Mode
- Automatic Power Savings Mode Decreases ICC in Static Mode
` Automated Program and Block Erase
- Command User Interface
- Status Register
` SRAM-Compatible Write Interface
` ETOX™ V Nonvolatile Flash Technology
28F016S3 Connection Diagram
28F020 General Description
Intel's 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel's 28F020 is offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F020 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.
Intel's 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.
With Intel's ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel's 28F020 is offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F020 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.
Intel's 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.
With Intel's ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.
28F020 Maximum Ratings
Operating Temperature
During Read ..........................0 °C to +70 °C(1)
During Erase/Program...........0 °C to +70 °C(1)
Operating Temperature
During Read .....................40 °C to +85 °C(2)
During Erase/Program......40 °C to +85 °C(2)
Temperature Under Bias.........10 °C to +80 °C(1)
Temperature Under Bias.........50 °C to +95 °C(2)
Storage Temperature................65 °C to +125 °C
Voltage on Any Pin with
Respect to Ground ...............2.0 V to +7.0 V(2)
Voltage on Pin A9 with
Respect to Ground ..........2.0 V to +13.5 V(2,3)
VPP Supply Voltage with
Respect to Ground
During Erase/Program.....2.0 V to +14.0 V(2,3)
VCC Supply Voltage with
Respect to Ground ..............2.0 V to +7.0 V(2)
Output Short Circuit Current.................... 100 mA(4)
During Read ..........................0 °C to +70 °C(1)
During Erase/Program...........0 °C to +70 °C(1)
Operating Temperature
During Read .....................40 °C to +85 °C(2)
During Erase/Program......40 °C to +85 °C(2)
Temperature Under Bias.........10 °C to +80 °C(1)
Temperature Under Bias.........50 °C to +95 °C(2)
Storage Temperature................65 °C to +125 °C
Voltage on Any Pin with
Respect to Ground ...............2.0 V to +7.0 V(2)
Voltage on Pin A9 with
Respect to Ground ..........2.0 V to +13.5 V(2,3)
VPP Supply Voltage with
Respect to Ground
During Erase/Program.....2.0 V to +14.0 V(2,3)
VCC Supply Voltage with
Respect to Ground ..............2.0 V to +7.0 V(2)
Output Short Circuit Current.................... 100 mA(4)
28F020 Features
Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
100,000 Erase/Program Cycles
2.0 V ±5% VPP
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technolog
EPROM-Compatible Process Base
High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Extended Temperature Options
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
100,000 Erase/Program Cycles
2.0 V ±5% VPP
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
±10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technolog
EPROM-Compatible Process Base
High-Volume Manufacturing Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Extended Temperature Options
28F020 Connection Diagram
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