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2N5685, 2N5686, 2N5686G

2N5685, 2N5686, 2N5686G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-3P  D/C:08+/09+

2N5686 Picture

2N5685, 2N5686, 2N5686G Datasheet download

Five Points

Part Number: 2N5686

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3P

D/C: 08+/09+

Description: TRANS NPN PWR GP 50A 80V TO3

 

 
 
 
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  • 2N5685

  • Pack: TO Qty: 5000  Adddate: 2024-04-23
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  • Abenic   China
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About 2N5685

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Datasheet: 2N5685

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  • Pack: TO Qty: 5000  Adddate: 2024-04-23
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  • Abenic   China
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    Fax: 86-755-83019622
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  • 2N5686

  • Note: ASI  Adddate: 2024-04-23
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  • JAD Tech, Inc.   United
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  • 2N500

  • Pack: CAN D/C: 01+& Qty: 1160  Adddate: 2024-04-23
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    (2)

About 2N5686

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Datasheet: 2N5686

File Size: 277303 KB

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  • 2N500

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  • HK UNI-MEGA Electronic Tech Ltd   Hong
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  • 2N501

  • Pack: CAN D/C: 01+& Qty: 1160  Adddate: 2024-04-23
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  • 2N5010

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  • 2N5011

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  • 2N5012

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About 2N5001

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Datasheet: 2N5001

File Size: 286726 KB

Manufacturer: ETC [ETC]

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2N5685 Maximum Ratings

Rating Symbol 2N5685 2N5684 2N5686
Unit
CollectorEmitter Voltage VCEO 60 80 80 Vdc
CollectorBase Voltage VCB 60 80 80 Vdc
EmitterBase Voltage VEB 5.0 5.0 5.0 Vdc
Collector Current - Continuous IC 50 50 50 Adc
Base Current IB 15 15 15 Adc
Total Device Dissipation @ TC = 25
Derate above 25
PD 300
1.715
300
1.715
300
1.715
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +200 65 to +150

2N5686 Parameters

Technical/Catalog Information2N5686
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)50A
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 25A, 2V
Vce Saturation (Max) @ Ib, Ic1V @ 2.5A, 25A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N5686
2N5686
2N5686OS ND
2N5686OSND
2N5686OS

2N5686 General Description

      This is the description about 2N5686 of the NPN POWER SILICON TRANSISTOR, Qualified per MIL-PRF-19500/464.
      The absolute Maximum Ratings are these (TC = 250°C unless otherwise noted).Collector-Emitter Voltage VCEO is 80 Vdc. Collector-Base Voltage VCBO is 80 Vdc. Emitter-Base Voltage VEBO is 5.0 Vdc. Base Current IB is 15 Adc. Collector Current IC is 50 Adc. Total Power Dissipation (@ TC = +250°C) is 300W and (@ TC = +1000°C PT) is 171W. Operating Junction Temperature Range is from -55 to +200 °C.Storage Junction Temperature Range is from -55 to +200 °C.
      These are the Electrical Characteristics (Ta = 25°C).Collector Emitter Breakdown Voltage (IC = 100 mAdc) is 80 Vdc. Collector-Emitter Cutoff Current (VCE = 40 Vdc 2N5686 ICEO) is 500 mAdc. Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 1.5 Vdc 2N5686 ICEX) is 500 mAdc. Collector-Base Cutoff Current (VCB = 80 Vdc 2N5686 ICBO) is 2.0 mAdc. Emitter-Base Cutoff Current (VEB = 5.0 Vdc IEBO) is 1.0 mAdc. Forward-Current Transfer Ratio (IC = 5.0 Adc, VCE = 2.0 Vdc) is from 30 to 60Vdc and (IC = 25 Adc, VCE = 2.0 Vdc) is from 15 to 60Vdc and  (IC = 50 Adc, VCE = 5.0 Vdc) is from 5.0 to 60Vdc. Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc) is 1.0 Vdc and (IC = 50 Adc, IB = 10 Adc) is 5.0Vdc. Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc VBE(sat)) is 2.0 Vdc. Base-Emitter Voltage (IC = 25 Adc, VCE = 2.0 Vdc VBE(on)) is 2.0 Vdc.
      At present there is not too much information about this model. If you are willing to find more about the 2N5686, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.


2N5686 Maximum Ratings

Rating Symbol 2N5685 2N5684 2N5686
Unit
CollectorEmitter Voltage VCEO 60 80 80 Vdc
CollectorBase Voltage VCB 60 80 80 Vdc
EmitterBase Voltage VEB 5.0 5.0 5.0 Vdc
Collector Current - Continuous IC 50 50 50 Adc
Base Current IB 15 15 15 Adc
Total Device Dissipation @ TC = 25
Derate above 25
PD 300
1.715
300
1.715
300
1.715
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +200 65 to +150

2N5686 Features



2N5686G Parameters

Technical/Catalog Information2N5686G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)50A
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 25A, 2V
Vce Saturation (Max) @ Ib, Ic1V @ 2.5A, 25A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5686G
2N5686G
2N5686GOS ND
2N5686GOSND
2N5686GOS

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