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Total Device Dissipation @ TC = 25 Derate above 25
PD
300 1.715
300 1.715
300 1.715
Watts W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200
65 to +150
2N5686 Parameters
Technical/Catalog Information
2N5686
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
50A
Power - Max
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 25A, 2V
Vce Saturation (Max) @ Ib, Ic
1V @ 2.5A, 25A
Frequency - Transition
2MHz
Current - Collector Cutoff (Max)
1mA
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Packaging
Tray
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
2N5686 2N5686 2N5686OS ND 2N5686OSND 2N5686OS
2N5686 General Description
This is the description about 2N5686 of the NPN POWER SILICON TRANSISTOR, Qualified per MIL-PRF-19500/464. The absolute Maximum Ratings are these (TC = 250°C unless otherwise noted).Collector-Emitter Voltage VCEO is 80 Vdc. Collector-Base Voltage VCBO is 80 Vdc. Emitter-Base Voltage VEBO is 5.0 Vdc. Base Current IB is 15 Adc. Collector Current IC is 50 Adc. Total Power Dissipation (@ TC = +250°C) is 300W and (@ TC = +1000°C PT) is 171W. Operating Junction Temperature Range is from -55 to +200 °C.Storage Junction Temperature Range is from -55 to +200 °C. These are the Electrical Characteristics (Ta = 25°C).Collector Emitter Breakdown Voltage (IC = 100 mAdc) is 80 Vdc. Collector-Emitter Cutoff Current (VCE = 40 Vdc 2N5686 ICEO) is 500 mAdc. Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 1.5 Vdc 2N5686 ICEX) is 500 mAdc. Collector-Base Cutoff Current (VCB = 80 Vdc 2N5686 ICBO) is 2.0 mAdc. Emitter-Base Cutoff Current (VEB = 5.0 Vdc IEBO) is 1.0 mAdc. Forward-Current Transfer Ratio (IC = 5.0 Adc, VCE = 2.0 Vdc) is from 30 to 60Vdc and (IC = 25 Adc, VCE = 2.0 Vdc) is from 15 to 60Vdc and (IC = 50 Adc, VCE = 5.0 Vdc) is from 5.0 to 60Vdc. Collector-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc) is 1.0 Vdc and (IC = 50 Adc, IB = 10 Adc) is 5.0Vdc. Base-Emitter Saturation Voltage (IC = 25 Adc, IB = 2.5 Adc VBE(sat)) is 2.0 Vdc. Base-Emitter Voltage (IC = 25 Adc, VCE = 2.0 Vdc VBE(on)) is 2.0 Vdc. At present there is not too much information about this model. If you are willing to find more about the 2N5686, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.
2N5686 Maximum Ratings
Rating
Symbol
2N5685
2N5684
2N5686
Unit
CollectorEmitter Voltage
VCEO
60
80
80
Vdc
CollectorBase Voltage
VCB
60
80
80
Vdc
EmitterBase Voltage
VEB
5.0
5.0
5.0
Vdc
Collector Current - Continuous
IC
50
50
50
Adc
Base Current
IB
15
15
15
Adc
Total Device Dissipation @ TC = 25 Derate above 25