2N60E, 2N60L, 2N60L-A Selling Leads, Datasheet
MFG:PH Package Cooled: PH D/C:TO:220
MFG:PH Package Cooled: PH D/C:TO:220
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PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2N6027
File Size: 181809 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
PARAMETER | SYMBOL | RATINGS | UNIT | |
Drain-Source Voltage | 2N60L-A 2N60L-B |
VDSS | 600 650 |
V V |
Gate-Source Voltage Avalanche Current (Note 1) |
VGSS IAR |
±30 2.0 |
V A | |
Drain Current Continuous | TC = 25 TC = 100 |
ID | 2.0 1.26 |
A A |
Drain Current Pulsed (Note 1) | IDP | 8.0 | A | |
Avalanche Energy | Single Pulsed (Note 2) Repetitive (Note 1) |
EAS EAR |
140 4.5 |
mJ mJ |
Peak Diode Recovery dv/dt (Note 3) | dv/dt | 4.5 | V/ns | |
Total Power Dissipation | TO-220 TO-220F TO-251 TO-252 |
PD | 32 9 25 20 |
W W W W |
Junction Temperature Operating Temperature Storage Temperature |
TJ TOPR TSTG |
+150 -55 ~ +150 -55 ~ +150 |
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.