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2N6490G, 2N6491, 2N6491G

Table of contents:
Info of 2N6490G
Info of 2N6491
Info of 2N6491G

2N6490G, 2N6491, 2N6491G Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:7850 D/C:09+

2N6490G, 2N6491, 2N6491G Datasheet download

Five Points

Part Number: 2N6490G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: 7850

D/C: 09+

Description: TRANS PWR PNP 15A 80V TO220AB

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2N6490G Parameters

Technical/Catalog Information	2N6490G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	15A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500mA, 5A
Frequency - Transition	5MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6490G 2N6490G

2N6491 Parameters

Technical/Catalog Information	2N6491
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	15A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500mA, 5A
Frequency - Transition	5MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6491 2N6491 2N6491OS ND 2N6491OSND 2N6491OS

2N6491 General Description

·With TO-220 package
·Excellent safe operating area
·Complement to type 2N6486 2N6487 2N6488 respectively

2N6491 Maximum Ratings

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	2N6489	Open emitter	-50	V
		2N6490		-70
		2N6491		-90
V_CEO	Collector-emitter voltage	2N6489	Open base	-40	V
		2N6490		-60
		2N6491		-80
V_EBO	Emitter-base voltage		Open collector	-5	V
I_C	Collector current			-15	A
I_B	Base current			-5	A
P_T	Total power dissipation		T_C=25	75	W
T_j	Junction temperature			150
T_stg	Storage temperature			-65~150

2N6491 Typical Application

·Power amplifier and medium speed switching applications

2N6491G Parameters

Technical/Catalog Information	2N6491G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	15A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500mA, 5A
Frequency - Transition	5MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6491G 2N6491G 2N6491GOS ND 2N6491GOSND 2N6491GOS

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