2SC2510, 2SC2510A, 2SC2512 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:TO-59 D/C:02+
2SC2510, 2SC2510A, 2SC2512 Datasheet download

Part Number: 2SC2510
MFG: TOSHIBA
Package Cooled: TO-59
D/C: 02+
MFG:TOSHIBA Package Cooled:TO-59 D/C:02+
2SC2510, 2SC2510A, 2SC2512 Datasheet download

MFG: TOSHIBA
Package Cooled: TO-59
D/C: 02+
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Datasheet: 2SC2510
File Size: 141013 KB
Manufacturer: Toshiba
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PDF/DataSheet Download
Datasheet: 2SC0829
File Size: 114565 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
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PDF/DataSheet Download
Datasheet: 2SC2512
File Size: 34460 KB
Manufacturer: hitachi
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Features of the 2SC2510 are:(1)specified 28V,28MHz,characteristics;(2)output power:Po=150WPEP(Min.);(3)power gain:Gp=12.2dB(Min.);(4)collector efficiency:C=35%(Min.);(5)intermodulation distortion:IMD=-30dB(Max.).
The absolute maximum ratings of the 2SC2510 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 60,the unit is V;(2):the characteristic is collector-emitter voltage,the symbol is VCES,the rating is 60,the unit is V;(3):the characteristic is collector-emitter voltage,the symbol is VCEO,the rating is 35,the unit is V;(4):the characteristic is cemitter-base voltage,the symbol is VEBO,the rating is 4,the unit is V;(5):the characteristic is collector current,the symbol is IC,the rating is 20,the unit is A;(6):the characteristic is collector power dissipation,the symbol is PC,the rating is 250,the unit is W;(7):the characteristic is junction temperature,the symbol is Tj,the rating is 175,the unit is ;(8):the characteristic is storage temperature range,the symbol is Tstg,the rating is -65 to 175,the unit is .
The electrical characteristics of the 2SC2510 can be summarized as:(1):the characteristic is collector-emitter breakdown voltage,the symbol is V(BR)CEO,the Min is 35,the unit is V;(2):the characteristic is emitter-base breakdown voltage,the symbol is V(BR)EBO,the Min is 4,the unit is V;(3):the characteristic is collector-emitter breakdown voltage,the symbol is V(BR)CES,the Min is 55,the unit is V;(4):the characteristic is DC current gain,the symbol is hFE,the Min is 10;(5):the characteristic is collector output capacitance,the symbol is Cob,the Typ is 450,the Max is 600,the unit is pF;(6):the characteristic is power gain,the symbol is Cp,the Min is 12.2,the Typ is 13.3,the unit is dB;(7):the characteristic is input power,the symbol is Pi,the Typ is 7,the Max is 9,the unit is WPEP;(8):the characteristic is collector efficiency,the symbol is C,the Min is 35,the unit is %;(9):the characteristic is intermodulation distortion,the symbol is IMD,the Max is -30,the unit is dB;(10):the characteristic is series equivalent input impedance,the symbol is Zin,the Typ is 1.4,-j0.9,the unit is ;(11):the characteristic is series equivalent output impedance,the symbol is Zout,the Typ is 2.3,-j0.9,the unit is .
|
Characteristic |
Symbol |
Rating |
Unit | |
| Collector-base voltage |
VCBO |
60 |
V | |
| Collector-emitter voltage |
VCEX |
60 |
V | |
| Collector-emitter voltage |
VCEO |
35 |
V | |
| Emitter-base voltage |
VEBO |
4 |
V | |
| Collector current |
IC |
20 |
A | |
| Collector power dissipation |
PC |
250 |
W | |
| Junction temperature |
Tj |
175 |
||
| Storage temperature range |
Tstg |
-65~175 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
| Item | Symbol | Ratings | Unit |
| Collector to base voltage | VCBO | 30 | V |
| Collector to emitter voltage | VCEO | 20 | V |
| Emitter to base voltage | VEBO | 3 | V |
| Collector current | IC | 50 | mA |
| Collector power dissipation | PC | 300 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
