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2SC3569, 2SC3570, 2SC3571

Table of contents:
Info of 2SC3569
Info of 2SC3570
Info of 2SC3571

2SC3569, 2SC3570, 2SC3571 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:NIP D/C:03+

2SC3569, 2SC3570, 2SC3571 Datasheet download

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Part Number: 2SC3569

MFG: TOSHIBA

Package Cooled: NIP

D/C: 03+

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2SC3569 General Description

·With TO-220F package
·Low collector saturation voltage

2SC3569 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	Open emitter	500	V
V_CEO	Collector-emitter voltage	Open base	400	V
V^_EBO	Emitter-base voltage	Open collector	7	V
I_C	Collector current		2	A
I_CM	Collector current-Peak		4	A
I_B	Base current		1	A
P_C	Collector power dissipation	T_C=25	15	W
T_j	Junction temperature		150
T_stg	Storage temperature		-55~150

2SC3569 Typical Application

·High speed switching applications

2SC3570 General Description

      The 2SC3570 is NPN silicon epitaxial transistor designed for switching regulator,DC-DC converter and high frequency power amplifier application.The 2SC3570 has 3 features including easy mount by eliminating insulation sheet and bushing;low collector saturation voltage;high switching speed.
      The absolute maximun ratings at Ta=25°C, Collector to Base Voltage VCBO is 500 V;Collector to Emitter Voltage VCEO is 400V;Emitter to Base Voltage VEBO is 8.0 V;Collector Current(DC) IC is 5.0 A;total power dissipation is 25 W;Junction temperature 150°C maxnimum;Storage temperature is -55 to +150°C.
      Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein.Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to holdDiodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
      China integrated circuits,China ICs,China semiconductor,China IGBT,China components,China transistor,China Electronic component,China electronics audio component,China Power Electronics.latest manufacturer factory stock list.Our prices are better than other similiar products.
      The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
      No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
      At present there is not too much information about this model.If you are willing to find more about 2SC3570, please pay attention to our web! We will promptly update the relevant information.

2SC3570 Maximum Ratings

2SC3570 Features

2SC3571 General Description

·With TO-220Fa package
·Low collector saturation voltage
·High switching speed

2SC3571 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector to base voltage	Open emitter	500	V
V_CEO	Collector to emitter voltage	Open base	400	V
V_EBO	Emitter to base voltage	Open collector	7	V
I_C	Collector current (DC)		7	A
I_CM	Collector current-Peak		15
I_B	Base current		3.5	W
P_T	Total power dissipation	T_C=25	30
T_j	Junction temperature		150
T_stg	Storage temperature		-55~150

2SC3571 Typical Application

·Switching regulator
·DC-DC converter
·High frequency power amplifier

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