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2SC3976, 2SC3979, 2SC3979A

2SC3976, 2SC3979, 2SC3979A Selling Leads, Datasheet

MFG:Panasonic - SSG  Category:Discrete Semiconductor Products  Package Cooled:MAT  D/C:03+

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2SC3976, 2SC3979, 2SC3979A Datasheet download

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Part Number: 2SC3979

Category: Discrete Semiconductor Products

MFG: Panasonic - SSG

Package Cooled: MAT

D/C: 03+

Description: TRANS NPN 800VCEO 3A TO-220F

 

 
 
 
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About 2SC0829

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Datasheet: 2SC0829

File Size: 114565 KB

Manufacturer: PANASONIC [Panasonic Semiconductor]

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  • 2SC 3076

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  • 2SC 4979

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2026-06-14
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About 2SC3979

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Datasheet: 2SC3979

File Size: 72946 KB

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  • 2SC 4979

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  • H.K.S.K Electronic Co.,Ltd   China
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  • 2SC1000

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  • HK UNI-MEGA Electronic Tech Ltd   Hong
    Contact: Mr.Frank Frank   MSN:unimega88@hotmail.com
    Tel: 00852-00852-00852-62112978
    Fax: 00852-00852-00852-6211-2396
    (2)
  • 2SC1001

  • Vendor: Nec Pack: CAN D/C: 01+& Qty: 3263  Adddate: 2026-06-14
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  • HK UNI-MEGA Electronic Tech Ltd   Hong
    Contact: Mr.Frank Frank   MSN:unimega88@hotmail.com
    Tel: 00852-00852-00852-62112978
    Fax: 00852-00852-00852-6211-2396
    (2)

About 2SC3979A

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Datasheet: 2SC3979A

File Size: 61268 KB

Manufacturer: PANASONIC [Panasonic Semiconductor]

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2SC3976 General Description

      The 2SC3976 is Silicon NPN triple diffusion planar type for high breakdown voltage high-speed switching.The 2SC3976 has 4 features.The first one is high-speed switching.The second one is high collector to base voltage VCBO.The third one is wide area of safe operation (ASO).The fourth one is satisfactory linearity of foward current transfer ratio hFE.
      The 2SC3976 has some informations about absolute Maximum Ratings (TC=25°C).When parameter is collector to base voltage,symbol is VCBO,ratings is 800,unit is V.When parameter is collector to base voltage,symbol is VCBO,ratings is 800,unit is V.When parameter is collector to base voltage,symbol is VCEO,ratings is 500,unit is V.When parameter is emitter to base voltage,symbol is VEBO,ratings is 8,unit is V.When parameter is peak collector current,symbol is ICP,ratings is 25,unit is A.When parameter is collector current,symbol is IC,ratings is 12,unit is A.When parameter is collector current,symbol is IB,ratings is 6,unit is A.When parameter is Collector power dissipation TC=25°C,symbol is PC,ratings is 150,unit is W.When parameter is collector power dissipation Ta=25°C,symbol is PC,ratings is 3.5,unit is W.When parameter is junction temperature,symbol is Tj,ratings is 150,unit is °C.When parameter is storage temperature,symbol is Tstg,ratings is 55 to +150,unit is °C.
      The 2SC3976 has some informations about electrical characteristics (TC=25°C).When parameter is collector cutoff current,symbol is ICBO,conditions is VCB = 800V, IE = 0,max is 100,unit is A.When parameter is emitter cutoff current,symbol is ICBO,conditions is VEB = 5V, IC = 0,max is 100,unit is A.When parameter is collector to emitter voltage,symbol is VCEO,conditions is IC = 10mA, IB = 0,min is 500,unit is V.When parameter is forward current transfer ratio,symbol is hFE1,conditions is VCE = 5V, IC = 0.1A,min is 15.When parameter is forward current transfer ratio,symbol is hFE2,conditions is VCE = 5V, IC = 7A,min is 8.When parameter is collector to emitter saturation voltage,symbol is VCE(sat),conditions is IC = 7A, IB = 1.4A,max is 1.0,unit is V.When parameter is base to emitter saturation voltage,symbol is VCE(sat),conditions is IC = 7A, IB = 1.4A,max is 1.5,unit is V.                 



2SC3976 Maximum Ratings



2SC3976 Features



2SC3979 Parameters

Technical/Catalog Information2SC3979
VendorPanasonic - SSG
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)800V
Current - Collector (Ic) (Max)3A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic1.5V @ 160mA, 800mA
Frequency - Transition10MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SC3979
2SC3979

2SC3979A Parameters

Technical/Catalog Information2SC3979A
VendorPanasonic - SSG
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)800V
Current - Collector (Ic) (Max)3A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 100mA, 6V
Vce Saturation (Max) @ Ib, Ic1.5V @ 160mA, 800mA
Frequency - Transition10MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-220F
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SC3979A
2SC3979A

2SC3979A Maximum Ratings

PARAMETER
SYMBOL
RATING

UNIT

Collector to Base Voltage 2SC3979
VCBO
900
V
2SC3979A
1000
Collector to Emitter Voltage 2SC3979
VCES
900
V
2SC3979A
1000
Collector to emitter voltage
VCEO
800
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
3
mA
Peak collector current
ICP
5
mA
Base current
IB
4
mA
Collector Dissipation TC=25°C
PC
40
mW
Ta=25°C
2.0
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55to+150

2SC3979A Features

· High-speed switching
· High collector to base voltage VCBO
· Wide area of safe operation (ASO)
· Satisfactory linearity of foward current transfer ratio hFE
· Full-pack package which can be installed to the heat sink with one screw

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