MFG:Panasonic - SSG Category:Discrete Semiconductor Products Package Cooled:TO3P D/C:06+
2SC4420, 2SC4421, 2SC4422 Datasheet download
Category: Discrete Semiconductor Products
MFG: Panasonic - SSG
Package Cooled: TO3P
D/C: 06+
Description: TRANS NPN 800VCEO 3A TOP-3F
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PDF/DataSheet Download
Datasheet: 2SC4420
File Size: 70969 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: 2SC0829
File Size: 114565 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2SC4422
File Size: 52953 KB
Manufacturer: hitachi
Download : Click here to Download
| Technical/Catalog Information | 2SC4420 |
| Vendor | Panasonic - SSG |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 800V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 70W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 160mA, 800mA |
| Frequency - Transition | 10MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TOP-3F |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SC4420 2SC4420 |
The 2SC4420 is a kind of silicon NPN triple diffusion planar type. It is used for high breakdown voltage high-speed switching. It has the following features: (1) high-speed switching; (2) high collector to base voltage; (3) wide area of safe operation; (4) satisfactory linearity of forward current transfer ratio; (5) full-pack package which can be installed to the heat sink with one screw.
What comes next is its absolute maximum ratings at TC is 25 . (1): collector to base voltage (VCBO) is 900 V, collector to emitter voltage (VCEO) is 800 V and emitter to base voltage (VEBO) is 7 V; (2): peak collector current (ICP) is 5 A; (3): collector current (IC) is 3 A; (4): collector power dissipation (PC) is 70 W at TC is 25 and is 3 W at TA is 25 ; (5): junction temperature (Tj) is 150 ; (6): storage temperature (Tstg) is from -55 to 150 . Then is about the electrical characteristics at TC is 25 . (1): the maximum collector cutoff current (ICBO) is 50 A when VCB is 900 V and IE is 0; (2): the maximum base to emitter saturation voltage is 1.5 V at IC is 0.8 A and IB is 0.16 A; (3): the typical transition frequency is 10 MHz at VCE is 5 V, IC is 0.15 A and f is 1 MHz; (4): the typical turn-on time is 0.7 s, storage tome is 2.5 s and fall time is 0.3 s at IC is 0.8 A and VCC is 250 V.
|
Parameter |
Symbol |
Rating |
Unit | |
| Collector to base voltage |
VCBO |
900 |
V | |
| Collector to emitter voltage |
VCES VCEO |
900 800 |
V | |
| Emitter to base voltage |
VEBO |
7 |
V | |
| Peak collector current |
ICP |
5 |
A | |
| Collector current |
IC |
3 |
A | |
| Base current |
IB |
1 |
A | |
| Collector power dissipation | TC=25°C Ta=25°C |
PC |
70 3 |
W |
| Junction temperature |
Tj |
150 |
||
| Storage temperature |
Tstg |
−55 to +150 |
||
| Item | Symbol | Ratings | Unit |
| Collector to base voltage | VCBO | 15 | V |
| Collector to emitter voltage | VCEO | 11 | V |
| Emitter to base voltage | VEBO | 2 | V |
| Collector current | IC | 50 | mA |
| Collector power dissipation | PC | 400 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | 55 to +150 | °C |
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