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2SC536, 2SC5360, 2SC5361

Table of contents:
Info of 2SC536
Info of 2SC5360
Info of 2SC5361

2SC536, 2SC5360, 2SC5361 Selling Leads, Datasheet

Package Cooled:N/A D/C:06+

2SC536, 2SC5360, 2SC5361 Datasheet download

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Part Number: 2SC536

MFG: --

Package Cooled: N/A

D/C: 06+

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2SC536 Features

`Power dissipation
P_CM: 400 mW (Tamb=25)
`Collector current
I_CM: 100 mA
`Collector-base voltage
V_(BR)CBO: 40 V
`Operating and storage junction temperature range
T_J, T_stg: -55 to +150

2SC5361 General Description

The 2SC5361 is designed as toshiba transistor silicon NPN epitaxial planar type for switching regulator applications and high voltage switching applications and DC-DC converter applications.

It has three features. (1)Excellent switching times which would be max 0.5us at Ic=1.2A. (2)High collectors breakdown voltage which would be 800V. (3)It has high DC current gain which would be min 15 at Ic=0.15A. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 900V. (2)Its collector to emitter voltage would be 800V. (3)Its emitter to base voltage would be 7V. (4)Its collector current would be 3A for DC and would be 5A for pulse. (5)Its base current would be 1A. (6)Its collector power dissipation would be 1.5W at Ta=25°C and would be 40W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector cutoff current would be max 100uA with conditions of Vcb=720V and Ie=0. (2)Its emitter cutoff current would be max 10uA with conditions of Veb=7V and Ic=0. (3)Its DC current gain would be min 10 with conditions of Vce=5V and Ic=1mA. (4)Its collector to emitter saturation voltage would be max 1.0V with conditions of Ic=1.2A and Ib=0.24A. (5)Its base to emitter voltage would be max 1.3V with conditions of Ic=1.2A and Ib=0.24A.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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