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High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board
2SD1350A Parameters
Technical/Catalog Information
2SD1350A
Vendor
Panasonic - SSG
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
500mA
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA, 5V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 250mA
Frequency - Transition
55MHz
Current - Collector Cutoff (Max)
-
Mounting Type
Surface Mount
Package / Case
M-Type
Packaging
Bulk
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
2SD1350A 2SD1350A
2SD1350A Maximum Ratings
Parameter
Symbol
Rating
Unit
Collector to base voltage
2SD1350
VCBO
400
V
2SD1350A
600
Collector to emitter voltage
2SD1350
VCEO
400
V
2SD1350A
500
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
500
mA
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
−55 ~+150
2SD1350A Features
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board