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2SD1412A, 2SD1413, 2SD1414

2SD1412A, 2SD1413, 2SD1414 Selling Leads, Datasheet

MFG:TO-220F  Package Cooled:TOSHIBA  D/C:07+

2SD1412A, 2SD1413, 2SD1414 Picture

2SD1412A, 2SD1413, 2SD1414 Datasheet download

Five Points

Part Number: 2SD1412A

 

MFG: TO-220F

Package Cooled: TOSHIBA

D/C: 07+

 

 

 
 
 
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About 2SD1412A

PDF/DataSheet Download

Datasheet: 2SD1412A

File Size: 189107 KB

Manufacturer: Toshiba

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  • 2SD 1803

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  • H.K.S.K Electronic Co.,Ltd   China
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  • 2SD 1804

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  • 2SD 1806

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About 2SD0592

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Datasheet: 2SD0592

File Size: 73120 KB

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  • H.K.S.K Electronic Co.,Ltd   China
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  • 2SD 1804

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  • 2SD 1806

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2026-07-14
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  • H.K.S.K Electronic Co.,Ltd   China
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About 2SD0592

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Datasheet: 2SD0592

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2SD1412A General Description

The 2SD1412A is designed as toshiba transistor silicon NPN triple diffused type for power amplifier applications and high voltage switching applications. It has low saturation voltage which would be max 0.4V at Ic=4A.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 70V. (2)Its collector to emitter voltage would be 50V. (3)Its emitter to base voltage would be 5V. (4)Its collector current would be 7A. (5)Its base current would be 1A. (6)Its collector power dissipation would be 2.0W at Ta=25°C and it would be 30W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector cutoff current would be max 30uA. (2)Its emitter cutoff current would be max 50uA. (3)Its collector to emitter breakdown voltage would be min 50V. (4)Its DC current gain would be min 70 and max 240 with conditions of Vce=1V and Ic=1A and it would be min 30 with conditions of Vce=1V and Ic=4A. (5)Its collector to emitter saturation voltage would be typ 0.2V and max 0.4V. (6)Its base to emitter saturation voltage would be typ 0.9V and max 1.2V. (7)Its collector output capacitance would be typ 250pF. (8)Its switching time would be typ 0.2us for turn-on time and would be typ 2.5us for storage time and would be typ 0.5us for fall time.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

2SD1413 General Description

·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1023
·DARLINGTON

2SD1413 Maximum Ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 60 V
VCEO Collector -emitter voltage Open base 40 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current   3 A
IB Base current   0.5 A
PC Collector power dissipation TC=25 20 W
Tj Junction temperature   150
Tstg Storage temperature   -55~150

2SD1413 Typical Application

·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications

2SD1414 General Description

·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1024
·DARLINGTON

2SD1414 Maximum Ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 100 V
VCEO Collector -emitter voltage Open base 80 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current   4 A
IB Base current   0.5 A
PC Collector power dissipation TC=25 20 W
Tj Junction temperature   150
Tstg Storage temperature   -55~150

2SD1414 Typical Application

·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications

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