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·With TO-3PFa package ·High DC current gain ·DARLINGTON ·High VCBO
2SD1457A Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
200
VCEO
Collector-base voltage
2SD1457
Open emitter
150
V
2SD1457A
200
VEBO
Collector-emitter voltage
Open base
5
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
Ta=25
60
W
TC=25
3.0
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
2SD1457A Typical Application
·For power amplification
2SD1458 Parameters
Technical/Catalog Information
2SD1458
Vendor
Panasonic - SSG
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
700mA
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Frequency - Transition
55MHz
Current - Collector Cutoff (Max)
10A
Mounting Type
Surface Mount
Package / Case
M-Type
Packaging
Bulk
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
2SD1458 2SD1458
2SD1458 Maximum Ratings
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
1.5
A
Collector current
IC
0.7
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
55 ~ +150
˚C
2SD1458 Features
·High foward current transfer ratio hFE. ·Low collector to emitter saturation voltage VCE(sat). ·M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
2SD1459 Maximum Ratings
Absolute maximum ratings
VCEO [V]
150
IC [A]
1.5
PC Tc=25°C [W]
30
Electrical characteristics
hFE min
70
hFE max
200
VCE [V]
5
IC [A]
0.3
VCE (sat) max *typ [V]
1.5
IC [A]
0.5
IB [mA]
50
Cob typ [pF]
-
VCB [V]
-
2SD1459 Features
· High allowable collector dissipation (PC=2W). · Wide ASO.