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2SD1963/DGR, 2SD1963T100R, 2SD1964

Table of contents:
Info of 2SD1963/DGR
Info of 2SD1963T100R
Info of 2SD1964

2SD1963/DGR, 2SD1963T100R, 2SD1964 Selling Leads, Datasheet

MFG:Rohm Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-89 D/C:09+

2SD1963/DGR, 2SD1963T100R, 2SD1964 Picture

2SD1963/DGR, 2SD1963T100R, 2SD1964 Datasheet download

Five Points

Part Number: 2SD1963/DGR

Category: Discrete Semiconductor Products

MFG: Rohm Semiconductor

Package Cooled: SOT-89

D/C: 09+

Description: TRANSISTOR NPN 20V 3A SOT-89 TR

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2SD1963T100R Parameters

Technical/Catalog Information	2SD1963T100R
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Current - Collector (Ic) (Max)	3A
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	450mV @ 150mA, 1.5A
Frequency - Transition	150MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SC-62, SOT-89, MPT3 (3 leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SD1963T100R 2SD1963T100R

2SD1964 Maximum Ratings

Parameter		Symbol	Rating	Unit
Collector to base voltage		V_CBO	130	V
Collector to emitter voltage		V_CES	80	V
Emitter to base voltage		V_EBO	7	V
Peak collector current		I_CP	25	A
Collector current		I_C	15	A
Collector power dissipation	T_C=25°C T_a=25°C	P_C	50 2	W
Junction temperature		T_j	150
Storage temperature		T_stg	−55 to +150

2SD1964 Features

·Low collector to emitter saturation voltage V _CE(sat)
·Satisfactory linearity of foward current transfer ratio h_FE
·Large collector current I_C
·Full-pack package which can be installed to the heat sink with one screw

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