2SD2165, 2SD2166, 2SD2167 Selling Leads, Datasheet
MFG:NEC/TOSHIBA Package Cooled:TO220/17 D/C:03+
2SD2165, 2SD2166, 2SD2167 Datasheet download
Part Number: 2SD2165
MFG: NEC/TOSHIBA
Package Cooled: TO220/17
D/C: 03+
2SD2165, 2SD2166, 2SD2167
- Table of contents:
Info of 2SD2165
Info of 2SD2166
Info of 2SD2167
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About 2SD0592
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Datasheet: 2SD0592
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About 2SD2166
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Datasheet: 2SD2166
File Size: 163098 KB
Manufacturer: ROHM
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About 2SD2167
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Datasheet: 2SD2167
File Size: 40946 KB
Manufacturer: ROHM
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2SD2165 General Description
The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction.
2SD2165 Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Collector to base voltage | VCBO | 100 | V |
| Collector to emitter voltage | VCEO | 100 | V |
| Emitter to base voltage | VEBO | 7.0 | V |
| Collector current (DC) | IC(DC) | 6.0 | A |
| Collector current (pulse) | IC(pulse) | 10Note | A |
| Base current (DC) | IB(DC) | 1.0 | A |
| Total power dissipation (TC = 25) | PT | 30 | W |
| Total power dissipation (TA = 25) | PT | 2.0 | W |
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | −55 to +150 |
2SD2165 Features
• High hFE and low VCE(sat):
hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or insulation bushing .
hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or insulation bushing .
2SD2166 Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
VCBO |
Collector-base voltage |
50 |
V | |
|
VCEO |
Collector-emitter voltage |
20 |
V | |
|
VEBO |
Emitter-base voltage |
6 |
V | |
|
IC |
Collector current (DC) |
5 |
A | |
|
ICP |
Base current |
10 |
A | |
|
PC |
Collector power dissipation |
TC=25 |
1.5 5 |
W |
|
Tj |
Junction temperature |
150 |
||
|
Tstg |
Storage temperature |
-55~150 |
2SD2166 Features
1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
2) Excellent DC current gain characteristics.
3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
2SD2167 Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 31± 4 | V |
| Collector-emitter voltage | VCEO | 31± 4 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 2 | A (DC) |
| 3 | A(Pulse)*1 | ||
| Collector power dissipation | PC | 0.5 | W |
| 2 | W*2 | ||
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | -55 to +150 |
*2When mounted on a 40 x 40 x 0.7 mm ceramic board.
2SD2167 Features
·Built-in zener diode between collector and base.
·Zener diode has low voltage dispersion.
·Strong protection against reverse power surges due to low loads.
·PC=2 W (on 40× 40× 0.7mm ceramic board) .
·Zener diode has low voltage dispersion.
·Strong protection against reverse power surges due to low loads.
·PC=2 W (on 40× 40× 0.7mm ceramic board) .
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