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2SJ506STR-E, 2SJ509, 2SJ50H

Table of contents:
Info of 2SJ506STR-E
Info of 2SJ509
Info of 2SJ50H

2SJ506STR-E, 2SJ509, 2SJ50H Selling Leads, Datasheet

MFG:RENESAS Package Cooled:06+ D/C:SOT252

2SJ506STR-E, 2SJ509, 2SJ50H Datasheet download

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Part Number: 2SJ506STR-E

MFG: RENESAS

Package Cooled: 06+

D/C: SOT252

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2SJ509 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain−source voltage		V_DSS	−100	V
Drain−gate voltage (R_GS = 20 k)		V_DGR	−100	V
Gate−source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	I_D	-1	A
Drain current	Pulse (Note 1)	I_DP	-3	A
Drain power dissipation (T_a = 25°C)		P_D	0.9	W
Single pulse avalanche energy (Note 2)		E_AS	136.5	mJ
Avalanche current		I_AR	−1	A
Repetitive avalanche energy (Note 3)		E_AR	0.09	mJ
Channel temperature		T_ch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SJ509 Features

`4-V gate drive
`Low drain−source ON resistance : R_{DS (ON)} = 1.35 (typ.)
`High forward transfer admittance : |Yfs| = 0.7 S (typ.)
`Low leakage current : I_DSS = −100 A (max) (V_DS = −100 V)
`Enhancement mode : V_th = −0.8~−2.0 V (V_DS = −10 V, I_D= −1 mA)

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