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2SK4107, 2SK4108, 2SK4108(F)

Table of contents:
Info of 2SK4107
Info of 2SK4108
Info of 2SK4108(F)

2SK4107, 2SK4108, 2SK4108(F) Selling Leads, Datasheet

MFG:TOS Package Cooled:TO-3P D/C:07+

2SK4107, 2SK4108, 2SK4108(F) Datasheet download

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Part Number: 2SK4107

MFG: TOS

Package Cooled: TO-3P

D/C: 07+

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2SK4107 Maximum Ratings

Item		Symbol	Ratings	Unit
Drain-Source Voltage		V_DSS	500	V
Drain?gate voltage (R_GS = 20 k)		V_DGR	500	V
Gate-Source Voltage		V_GSS	±30	V
Drain Current	DC (Note 1)	I_D I_DP	15 60	A
	Pulse (Note 1)
Drain power dissipation		P_D	150	W
Single-pulse avalanche energy (Note 2)		E_AS	765	mJ
Avalanche current		I_AR	15	A
Repetitive avalanche energy (Note 3)		E_AR	15	mJ
Channel Temperature		T_ch	150
Storage Temperature		T_stg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SK4107 Features

• Low drain−source ON resistance : R_{DS (ON)} = 0. 33 (typ.)
• High forward transfer admittance : |Y_fs| = 8.5 S (typ.)
• Low leakage current : I_DSS = 100 A (max) (V_DS = 500 V)
• Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

2SK4108 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Drain−source voltage		V_DSS	500	V
Drain−gate voltage (R_GS = 20 k)		V_DGR	500	V
Gate−source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	20	A
Drain current	Pulse (Note 1)	I_DP	80	A
Drain power dissipation (T_c= 25)		P_D	150	W
Single-pulse avalanche energy (Note 2)		E_AS	960	mJ
Avalanche current		I_AR	20	A
Repetitive avalanche energy (Note 3)		E_AR	15	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SK4108 Typical Application

􀁺 `Low drain−source ON resistance : R_{DS (ON)} = 0. 21 (typ.)
􀁺 `High forward transfer admittance : |Y_fs| = 14 S (typ.)
􀁺 `Low leakage current : I_DSS = 100 A (max) (V_DS = 500 V)
􀁺 `Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

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