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5SNA 0800N330100, 5SNA 1000G450300, 5SNA 1200E250100

5SNA 0800N330100, 5SNA 1000G450300, 5SNA 1200E250100 Selling Leads, Datasheet

MFG:ABB  Package Cooled:800A/3300V/IGBT/1U  

5SNA 0800N330100, 5SNA 1000G450300, 5SNA 1200E250100 Picture

5SNA 0800N330100, 5SNA 1000G450300, 5SNA 1200E250100 Datasheet download

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Part Number: 5SNA 0800N330100

 

MFG: ABB

Package Cooled: 800A/3300V/IGBT/1U

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About 5SNA0400J6501

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Datasheet: 5SNA0400J6501

File Size: 185990 KB

Manufacturer: ABB

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About 5SNA0400J6501

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Datasheet: 5SNA0400J6501

File Size: 185990 KB

Manufacturer: ABB

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Datasheet: 5SNA0400J6501

File Size: 185990 KB

Manufacturer: ABB

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5SNA 1200E250100 General Description

      The 5SNA 1200E250100 is designed as IGBT module.
      It has six features.The first one is that it would have low-loss, rugged SPT chip-set.The second one is that it would have smooth switching SPT chip-set for good EMC.The third one is that it would be industry standard packaged.The fourth one is that it would have high power density.The fifth one is that it would have AlSiC base-plate for high power cycling capability.The last one is that it would have AlN substrate for low thermal resistance.That are all the features.
      Some maximum rated values about it have been concluded into several points as follow.The first one is about its collector emitter voltage which would be 2500V with condition of Vge= 0 V, Tvj >= 25 °C.The second one is about its DC collector current which would be 1200A with condition of Tc = 80 °C.The third one is about its peak collector current which would be 2400A with condition of tp =1 ms, Tc =80 °C.The fourth one is about its gate emitter voltage which would be min -20 and max 20 V.The fifth one is about its total power dissipation which would be 11000W with condition of Tc = 25 °C, per switch (IGBT).The sixth one is about its DC forward current which would be 1200 A.The seventh one is about its peak forward current which would be 2400 A.The eighth one is about its surge current which would be 11000A with condition of Vr= 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave.The ninth one is about its IGBT short circuit SOA which would be 10 s with condition of Vcc= 1900 V, Vcem chip <= 2500 V, Vge<= 15 V, Tvj<= 125 °C.The next one is baout its isolation voltage which would be 5000V with condition of 1 min, f = 50 Hz.The next one is about its junction temperature which would be 150 °C.The next one is about its junction operating temperature which would be from -40 to 125 °C.The next one is about its case temperature which would be from -40 to 125 °C.The next one is about its storage temperature which would be also from -40 to 125 °C.The last one is about its mounting torques which would be min 4Nm and max 6Nm with condition of base-heatsink, M6 screws and would be min 8Nm and max 10Nm with condition of main terminals, M8 screws and would be min 2Nm and 3Nm with condition of auxiliary terminals, M4 screws.And so on.
      For more information please contact us.



5SNA 1200E250100 Maximum Ratings



5SNA 1200E250100 Features



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