653B, 6540, 654-040728010811 Selling Leads, Datasheet
MFG:SOP Package Cooled:TI D/C:03+
653B, 6540, 654-040728010811 Datasheet download
Part Number: 653B
MFG: SOP
Package Cooled: TI
D/C: 03+
653B, 6540, 654-040728010811
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Info of 653B
Info of 6540
Info of 654-040728010811
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About 653
PDF/DataSheet Download
Datasheet: 653
File Size: 77880 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About 65474-001
PDF/DataSheet Download
Datasheet: 65474-001
File Size: 115196 KB
Manufacturer:
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About 65474-001
PDF/DataSheet Download
Datasheet: 65474-001
File Size: 115196 KB
Manufacturer:
Download : Click here to Download
6540 General Description
The GVT73128A16 is organized as a 131,072 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using triple-layer polysilicon, double-layer metal technology.
This device offers center power and ground pins for improved performance and noise immunity. Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, this device offers chip enable (CE#), separate byte enable controls (BLE# and BHE#) and output enable (OE#) with this organization.
The device offers a low power standby mode when chip is not selected. This allows system designers to meet low standby power requirements.
6540 Maximum Ratings
Voltage on VCC Supply Relative to VSS........-0.5V to +4.6V
VIN ........................................................-0.5V to VCC+1.0V
Storage Temperature (plastic) ...................-55oC to +125o
Junction Temperature ...............................................+125o
Power Dissipation ......................................................1.0W
Short Circuit Output Current ......................................50mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
VIN ........................................................-0.5V to VCC+1.0V
Storage Temperature (plastic) ...................-55oC to +125o
Junction Temperature ...............................................+125o
Power Dissipation ......................................................1.0W
Short Circuit Output Current ......................................50mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
6540 Features
• Fast access times: 10, 12, 15and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V +0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS triple-poly, double-metal process
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil TSOP
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V +0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS triple-poly, double-metal process
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil TSOP
6540 Connection Diagram
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