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6MBP75RSA120, 6MBP75RTB060, 6MBP75RTJ060

Table of contents:
Info of 6MBP75RSA120
Info of 6MBP75RTB060
Info of 6MBP75RTJ060

6MBP75RSA120, 6MBP75RTB060, 6MBP75RTJ060 Selling Leads, Datasheet

MFG:FUJI Package Cooled:Module D/C:2009

6MBP75RSA120, 6MBP75RTB060, 6MBP75RTJ060 Picture

6MBP75RSA120, 6MBP75RTB060, 6MBP75RTJ060 Datasheet download

Five Points

Part Number: 6MBP75RSA120

MFG: FUJI

Package Cooled: Module

D/C: 2009

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6MBP75RTB060 Maximum Ratings

Item			Symbol	Rating		Unit
Item			Symbol	Min.	Max.	Unit
DC bus voltage			V_DC	0	450	V
DC bus voltage (surge)			V_DC(surge)	0	500	V
DC bus voltage (short operating)			V_SC	200	400	V
Collector-Emitter voltage			V_CES *1	0	600	V
INV	Collector current	DC	I_C	-	75	A
		1ms	I_CP	-	150	A
		Duty=74.9%	-I_C *2	-	75	A
	Collector power dissipation	One transistor	P_C *3	-	198	W
Junction temperature			T_j	-	150
Input voltage of power supply for Pre-Driver			V_CC *4	0	20	V
Input signal voltage			V_in *5	0	V_CC-0.5	V
Input signal current			I_in	-	3	mA
Alarm signal voltage			V_ALM *6	0	V_CC	V
Alarm signal current			I_ALM*7	-	20	mA
Storage temperature			T_stg	-20	125
Operating case temperature			T_op	-40	100
Isolating voltage (Case-Terminal)			V_iso*8	-	AC2.5	kV
Screw torque		Mounting (M5)		-	3.5 *9	N`m
Screw torque		Terminal (M5)		-	3.5 *9	N`m

*1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=74.9%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N`m

6MBP75RTB060 Features

· Temperature protection provided by directly detecting the junction temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in built-in control circuit

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