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74LVC1G3157GV, 74LVC1G32, 74LVC1G32ADY

Table of contents:
Info of 74LVC1G3157GV
Info of 74LVC1G32
Info of 74LVC1G32ADY

74LVC1G3157GV, 74LVC1G32, 74LVC1G32ADY Selling Leads, Datasheet

MFG:NXP Package Cooled:0 D/C:08+

74LVC1G3157GV, 74LVC1G32, 74LVC1G32ADY Picture

74LVC1G3157GV, 74LVC1G32, 74LVC1G32ADY Datasheet download

Five Points

Part Number: 74LVC1G3157GV

MFG: NXP

Package Cooled: 0

D/C: 08+

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74LVC1G32 General Description

The 74LVC1G32 is a high-performance, low-power,low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

Input can be driven from either 3.3 V or 5 V devices. This feature allow the use of these devices in a mixed 3.3 V and 5 V environment.

Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall time.

This device is fully specified for partial power-down applications using I_off. The I_offcircuitry disables the output,preventing the damaging backflow current through the device when it is powered down.

The 74LVC1G32 provides the single 2-input OR function.

74LVC1G32 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CC	supply voltage		-0.5	+6.5	V
I_IK	input diode current	V_I< 0 V	-	-50	mA
V_I	input voltage	note 1	-0.5	+6.5	V
I_OK	output diode current	V_O > V_CC or V_O < 0 V	-	±50	mA
V_O	output voltage	active mode; notes 1 and 2	-0.5	V_CC+0.5	V
V_O	output voltage	Power-down mode; notes 1 and 2	-0.5	+6.5	V
I_O	output diode current	V_O = 0 V to V_CC	-	±50	mA
I_CC, I_GND	V_CC or GND current		-	±100	mA
T_stg	storage temperature		-65	+150
P_tot	power dissipation	T_amb = -40 to +125	-	250	mW

74LVC1G32 Features

` Wide supply voltage range from 1.65 V to 5.5 V
` High noise immunity
` Complies with JEDEC standard:
    JESD8-7 (1.65 V to 1.95 V)
    JESD8-5 (2.3 V to 2.7 V)
    JESD8B/JESD36 (2.7 V to 3.6 V).
` ±24 mA output drive (V_CC = 3.0 V)
` CMOS low power consumption
` Latch-up performance exceeds 250 mA
` Direct interface with TTL levels
` Inputs accept voltages up to 5 V
` Multiple package options
` ESD protection:
    HBM EIA/JESD22-A114-B exceeds 2000 V
    MM EIA/JESD22-A115-A exceeds 200 V.
` Specified from -40 to +85 and -40 to +125 .

74LVC1G32 Connection Diagram

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