AM41PDS3228DT11I, AM42-0002, AM42-0007 Selling Leads, Datasheet
MFG:SPANSION Package Cooled:N/A D/C:N/A
AM41PDS3228DT11I, AM42-0002, AM42-0007 Datasheet download
Part Number: AM41PDS3228DT11I
MFG: SPANSION
Package Cooled: N/A
D/C: N/A
AM41PDS3228DT11I, AM42-0002, AM42-0007
- Table of contents:
Info of AM41PDS3228DT11I
Info of AM42-0002
Info of AM42-0007
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About AM41PDS3228DT11IS
PDF/DataSheet Download
Datasheet: AM41PDS3228DT11IS
File Size: 1020336 KB
Manufacturer: AMD
Download : Click here to Download
About AM40-0023
PDF/DataSheet Download
Datasheet: AM40-0023
File Size: 212598 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
About AM42-0007
PDF/DataSheet Download
Datasheet: AM42-0007
File Size: 40129 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
AM42-0007 General Description
M/A-COM's AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply.
The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components.
M/A-COM's AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components.
M/A-COM's AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
AM42-0007 Maximum Ratings
Parameter Absolute Maximum
VDD 12 Volts
VGG -10 Volts
Power Dissipation 13.2 W
RF Input Power +23 dBm
Channel Temperature 150°C
Storage Temperature -65°C to +150°C
Ids 2100 mA
1. Operation of this device outside any of these limits may cause permanent damage.
2. Case Temperature (TC) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence.
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit.
7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6.
VDD 12 Volts
VGG -10 Volts
Power Dissipation 13.2 W
RF Input Power +23 dBm
Channel Temperature 150°C
Storage Temperature -65°C to +150°C
Ids 2100 mA
1. Operation of this device outside any of these limits may cause permanent damage.
2. Case Temperature (TC) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence.
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit.
7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6.
AM42-0007 Features
• High Linear Gain: 22 dB Typ.
• High Saturated Output Power: +33 dBm Typ.
• High Power Added Efficiency: 22% Typ.
• High P1dB: 32 dBm Typ.
• 50Ω=Input/Output Broadband Matched
• Integrated Output Power Detector
• High Performance Ceramic Bolt Down Package
• High Saturated Output Power: +33 dBm Typ.
• High Power Added Efficiency: 22% Typ.
• High P1dB: 32 dBm Typ.
• 50Ω=Input/Output Broadband Matched
• Integrated Output Power Detector
• High Performance Ceramic Bolt Down Package
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