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AON3816, AON4413, AON4604

Table of contents:
Info of AON3816
Info of AON4413
Info of AON4604

AON3816, AON4413, AON4604 Selling Leads, Datasheet

MFG:Alpha & Omega Semiconductor Inc (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-8 D/C:09NOPB

AON3816, AON4413, AON4604 Datasheet download

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Part Number: AON3816

Category: Discrete Semiconductor Products

MFG: Alpha & Omega Semiconductor Inc (VA)

Package Cooled: SOT-8

D/C: 09NOPB

Description: MOSFET DUAL N-CH 20V 4A 8-DFN

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AON3816 Parameters

Technical/Catalog Information	AON3816
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds	1315pF @ 10V
Power - Max	1.4W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	6-DFN
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AON3816 AON3816 785 1132 6 ND 78511326ND 785-1132-6

AON3816 General Description

The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrically identical.
-RoHS Compliant
-AO3816L is Halogen Free

AON3816 Maximum Ratings

Parameter		Symbol	10 Sec	Steady State	Units
Drain-Source Voltage		V_DS	20		V
Gate-Source Voltage		V_GS	±12		V
Continuous Drain Current ^AF	T_A=25°C	I_D	4	4	A
	T_C=100°C		4	4
Pulsed Drain Current ^B		I_DM	20
Power Dissipation ^A	T_C=25°C	P_D	2.1	1.4	W
	T_C=100°C		1.5	0.9
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150		°C

AON3816 Features

`V_DS (V) = 20V
`I_D = 4A (V_GS = 4.5V)
`R_DS(ON) < 22m (V_GS = 4.5V)
`R_DS(ON) < 23m (V_GS = 4V)
`R_DS(ON) < 28m (V_GS = 2.5V)

AON3816 Connection Diagram

AON4413 General Description

The AON4413 uses advanced trench technology to provide excellent R_DS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications).

AON4413 Maximum Ratings

Parameter		Symbol	10 Sec	Steady State	Units
Drain-Source Voltage		V_DS	-30		V
Gate-Source Voltage		V_GS	±20		V
Continuous Drain Current ^AF	T_A=25°C	I_D	-6.5	-4.7	A
	T_A=70°C		-5.3	-3.7
Pulsed Drain Current ^B		I_DM	-25
Power Dissipation ^A	T_A=25°C	P_D	3.1	2.6	W
	T_A=70°C		2.0	1.0
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150		°C

AON4413 Features

`V_DS (V) = -30V
`I_D = -6.5A (V_GS = -10V)
`R_DS(ON) < 46m (V_GS = -10V)
`R_DS(ON) < 60m (V_GS = -6V)

AON4413 Connection Diagram

AON4604 General Description

The AON4604 uses advanced trench technology to provide excellent R _DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications).

AON4604 Maximum Ratings

Parameter		Symbol	10 Sec	Steady State	Units
Drain-Source Voltage		V_DS	20	-20	V
Gate-Source Voltage		V_GS	±8	±8	V
Continuous Drain Current ^A	T_A=25°C	I_D	5.4	-3.8	A
Continuous Drain Current ^A	T_A=70°C	I_D	4.3	-3.0
Pulsed Drain Current ^B		I_DM	15	-15
Power Dissipation	T_A=25°C	P_D	1.9	1.9	W
Power Dissipation	T_A=70°C	P_D	1.2	1.2	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150		°C

AON4604 Features

`V_DS (V) = 20V -20V
`I_D = 5.4A -3.8A (V_GS= ±4.5V)
`R_DS(ON) < 42m < 90m (V_GS = ±4.5V)
`R_DS(ON) < 52m < 120m (V_GS= ±2.5V)
`R_DS(ON) < 72m < 170m (V_GS = ±1.8V)

AON4604 Connection Diagram

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