APT50M50L2FLL, APT50M50L2LL, APT50M50PVR Selling Leads, Datasheet
MFG:APT Package Cooled:APT D/C:07+
APT50M50L2FLL, APT50M50L2LL, APT50M50PVR Datasheet download

Part Number: APT50M50L2FLL
MFG: APT
Package Cooled: APT
D/C: 07+
MFG:APT Package Cooled:APT D/C:07+
APT50M50L2FLL, APT50M50L2LL, APT50M50PVR Datasheet download

MFG: APT
Package Cooled: APT
D/C: 07+
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PDF/DataSheet Download
Datasheet: APT50M50L2FLL
File Size: 67313 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT50M50L2LL
File Size: 64932 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: APT50M50PVR
File Size: 36952 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT50M50L2FLL |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
89 |
Amps |
| IDM | Pulsed Drain Current |
356 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
890 |
Watts |
| Linear Derating Factor |
7.12 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
89 |
Amps |
| EAR | Repetitive Avalanche Energy |
50 |
mJ |
| EAS | Single Pulse Avalanche Energy |
3200 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT50M50L2LL |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
87 |
Amps |
| IDM | Pulsed Drain Current |
348 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
890 |
Watts |
| Linear Derating Factor |
7.12 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
87 |
Amps |
| EAR | Repetitive Avalanche Energy |
50 |
mJ |
| EAS | Single Pulse Avalanche Energy |
3200 |
| Symbol | Characteristic / Test Conditions | APT15D30C | UNIT |
| VR |
Maximum D.C. Reverse Voltage |
300 | Volts |
VRRM |
Maximum Peak Repetitive Reverse Voltage | ||
VRWM |
Maximum Working Peak Reverse Voltage | ||
IF(AV) |
Maximum Average Forward Current (TC = 90°C, Duty Cycle = 0.5) |
15 | Amps |
IF(RMS) |
RMS Forward Current |
25 | |
IFSM |
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) |
100 | |
TJ,TSTG |
Operating and StorageTemperature Range |
-55 to 150 | °C |
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 |
