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The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 250 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel's Low Voltage Flash family of products.
To allow for simple in-system reprogrammability, the AT29BV020 does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29BV020 is performed on a sector basis; 256-bytes of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.
AT29BV020-35JC Maximum Ratings
Temperature Under Bias................. -55°C to +125°C Storage Temperature...................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ................... -0.6V to +6.25V All Output Voltages with Respect to Ground ............. -0.6V to VCC + 0.6V Voltage on A9 (including NC Pins) with Respect to Ground ................... -0.6V to +13.5V
AT29BV020-35JC Features
• Single Supply Voltage, Range 2.7V to 3.6V • Single Supply for Read and Write • Software Protected Programming • Fast Read Access Time - 250 ns • Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current • Sector Program Operation Single Cycle Reprogram (Erase and Program) 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes • Two 8 KB Boot Blocks with Lockout • Fast Sector Program Cycle Time - 20 ms Max. • Internal Program Control and Timer • DATA Polling for End of Program Detection • Typical Endurance > 10,000 Cycles • CMOS and TTL Compatible Inputs and Outputs • Commercial and Industrial Temperature Ranges