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The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a ide variety of digital voice-, image-, program code- and data-storage applications. he AT45DB041D supports RapidS serial interface for applications requiring very igh speed operations. RapidS serial interface is SPI compatible for frequencies up to 6 MHz. Its 4,325,376 bits of memory are organized as 2,048 pages of 256 bytes or 64 bytes each. In addition to the main memory, the AT45DB041D also contains two RAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a age in the main Memory is being reprogrammed, as well as writing a continuous data tream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained hree step read-modify-write operation. Unlike conventional Flash memories hat are accessed randomly with multiple address lines and a parallel interface, the ataFlash uses a RapidS serial interface to sequentially access its data. The simple equential access dramatically reduces active pin count, facilitates hardware layout, ncreases system reliability, minimizes switching noise, and reduces package size. The device is ptimized for use in many commercial and industrial applications where high-density, low-pin ount, low-voltage and low-power are essential.
To allow for simple in-system reprogrammability, the AT45DB041D does not require high input oltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V o 3.6V, for both the program and read operations. The AT45DB041D is enabled through the hip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), erial Output (SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
AT45DB041D Maximum Ratings
Temperature under Bias ............................. -55°C to +125°C Storage Temperature ................................. -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground ............................-0.6V to VCC + 0.6V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
AT45DB041D Features
• Single 2.5V or 2.7V to 3.6V Supply • RapidS® Serial Interface: 66 MHz Maximum Clock Frequency SPI Compatible Modes 0 and 3 • User Configurable Page Size 256 Bytes per Page 264 Bytes per Page • Page Program Operation Intelligent Programming Operation 2,048 Pages (256/264 Bytes/Page) Main Memory • Flexible Erase Options Page Erase (256 Bytes) Block Erase (2 Kbytes) Sector Erase (64 Kbytes) Chip Erase (4 Mbits) • Two SRAM Data Buffers (256/264 Bytes) Allows Receiving of Data while Reprogramming the Flash Array • Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications • Low-power Dissipation 7 mA Active Read Current Typical 25 A Standby Current Typical 5 A Deep Power-down Typical • Hardware and Software Data Protection Features Individual Sector • Sector Lockdown for Secure Code and Data Storage Individual Sector • Security: 128-byte Security Register 64-byte User Programmable Space Unique 64-byte Device Identifier • JEDEC Standard Manufacturer and Device ID Read • 100,000 Program/Erase Cycles Per Page Minimum • Data Retention 20 Years • Industrial Temperature Range • Green (Pb/Halide-free/RoHS Compliant) Packaging Options