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16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt operation.
ATMEGA161L-4AI Parameters
Technical/Catalog Information
ATMEGA161L-4AI
Vendor
Atmel
Category
Integrated Circuits (ICs)
Program Memory Size
16K x 8
RAM Size
1K x 8
Number of I /O
35
Package / Case
44-TQFP
Speed
4MHz
Controller Series
ATmega
Oscillator Type
External
Packaging
Tray
Program Memory Type
FLASH
EEPROM Size
512 x 8
Core Processor
AVR
Data Converters
-
Core Size
8-Bit
Operating Temperature
-40°C ~ 85°C
Connectivity
SPI, UART/USART
Peripherals
POR, PWM, WDT
Voltage - Supply (Vcc/Vdd)
2.7 V ~ 5.5 V
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
ATMEGA161L 4AI ATMEGA161L4AI
ATMEGA162 Parameters
Parameter
Value
Flash (Kbytes)
16
EEPROM (Kbytes)
0.5
SRAM (bytes)
1024
Max I/O Pins
35
F.max (MHz)
16
Vcc (V)
1.8-5.5
ATMEGA162 General Description
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 1.8 - 5.5 Volt operation.
ATMEGA162 Maximum Ratings
Operating Temperature............................. -55°C to +125°C Storage Temperature................................ -65°C to +150°C Voltage on any Pin except RESET with respect to Ground .............................-1.0V to VCC+0.5V Voltage on RESET with respect to Ground......-1.0V to +13.0V Maximum Operating Voltage .......................................... 6.0V DC Current per I/O Pin ............................................. 40.0 mA DC Current VCC and GND Pins................................ 200.0 mA
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.